Volume 12 Issue 1
Feb.  2019
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Chinese Optics  > 2019  >  12(1): 48-58.
SUN Sheng-ming, FAN Jie, XU Li, ZOU Yong-gang, YANG Jing-jing, GONG Chun-yang. Progress of tapered semiconductor diode lasers[J]. Chinese Optics, 2019, 12(1): 48-58. doi: 10.3788/CO.20191201.0048
Citation: SUN Sheng-ming, FAN Jie, XU Li, ZOU Yong-gang, YANG Jing-jing, GONG Chun-yang. Progress of tapered semiconductor diode lasers[J]. Chinese Optics, 2019, 12(1): 48-58. doi: 10.3788/CO.20191201.0048
shu

Progress of tapered semiconductor diode lasers

  • State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China

Funds:

Jilin Science and Technology Development Plan 20180519018JH

Jilin Science and Technology Development Plan 20190302052GX

Jilin Education Department "135" Science and Technology JJKH20190543KJ

the Innovation Science Foundation of Changchun University of Science and Technology XJJLG-2016-07

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  • Corresponding author: FAN Jie, E-mail:fanjie@cust.edu.cn
  • Received Date: 29 Jan 2018
  • Rev Recd Date: 03 Mar 2018
  • Publish Date: 01 Feb 2019
    Abstract
  • Tapered semiconductor lasers are characterized by high power and high beam quality. As a result, they have attracted much attention and have become a widely researched topic. This review focuses on the three main structures of tapered semiconductor diode lasers:the traditional structure, the distributed Bragg reflector(DBR) structure and the lateral grating structure. This paper summarizes the results of domestical and international representative research from the past ten years, introduces its theoretical research and experimental progress, and predicts the future development of tapered semiconductor lasers.

     

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