Si杂质扩散诱导InGaAs/AlGaAs量子阱混杂的研究

刘翠翠; 林楠; 熊聪; 曼玉选; 赵碧瑶; 刘素平; 马骁宇

doi:10.3788/CO.20201301.0203

Volume 13 Issue 1

Feb. 2020

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Article Contents

Chinese Optics > 2020 > 13(1): 203-216.

LIU Cui-cui, LIN Nan, XIONG Cong, MAN Yu-xuan, ZHAO Bi-yao, LIU Su-ping, MA Xiao-yu. Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities[J]. Chinese Optics, 2020, 13(1): 203-216. doi: 10.3788/CO.20201301.0203

Citation:

LIU Cui-cui, LIN Nan, XIONG Cong, MAN Yu-xuan, ZHAO Bi-yao, LIU Su-ping, MA Xiao-yu. Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities[J]. Chinese Optics, 2020, 13(1): 203-216. doi: 10.3788/CO.20201301.0203

Citation:

LIU Cui-cui, LIN Nan, XIONG Cong, MAN Yu-xuan, ZHAO Bi-yao, LIU Su-ping, MA Xiao-yu. Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities[J]. Chinese Optics, 2020, 13(1): 203-216. doi: 10.3788/CO.20201301.0203

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Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities

doi: 10.3788/CO.20201301.0203

LIU Cui-cui^{1, 2
,},
LIN Nan^{1, 2},
XIONG Cong¹,
MAN Yu-xuan^{1, 2},
ZHAO Bi-yao^{1, 2},
LIU Su-ping¹,
MA Xiao-yu^{1, 2
,
,}

1.
National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China

Funds:

Semiconductor laser preliminary research project No.41414010302

More Information

Corresponding author: MA Xiao-yu, E-mail:maxy@semi.ac.cn
Received Date: 15 Mar 2019
Rev Recd Date: 28 Apr 2019
Publish Date: 01 Feb 2020

Abstract

Abstract

Catastrophe Optical Damage (COD) usually occurs at the front cavity surface of quantum well semiconductor laser diodes, and it is a great trouble to its output power and life. The preparation of Non-Absorption Window (NAW) by quantum well intermixing based on Impurity Induced Disordering (IID) is a common method for inhibiting COD at the cavity surface, which has a great potential to achieve blue shift with high efficiency and low cost. In this paper, Si impurities were used to induce quantum well intermixing. The epitaxial structure of the InGaAs/AlGaAs quantum well semiconductor laser diode and the Si impurity diffusion layer and Si₃N₄ protective layer were grown by a Metal Organic Chemical Vapor Deposition (MOCVD) device. After several thermal annealing treatments, the Si impurity diffusion inducing the mutual diffusion between the quantum well and the barrier, which widened the band gap of the quantum well area and resulted in blue shift of the output wavelength, reducing the absorption of the emitted light. Usually thermal annealing will affect the surface morphology of epitaxial surface, and the surface morphology may affect the preparation of electrode in the subsequent packaging process. Combined with an optical microscope and photoluminescence (PL) spectrum, experimental results indicate that about 93nm wavelength blue shift can be observed under the annealing condition of 825℃/2 h. In conclusion, annealing can affect the topography of the epitaxial wafer's surface, but it does not affect the blue shift of wavelength and the preparation of electrode.
- quantum well semiconductor laser diodes,
- catastrophe optical damage,
- quantum well intermixing,
- blue shift

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References(17)

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