通过使用无掺杂的Al<sub>0.8</sub>Ga<sub>0.2</sub>N条状薄层结构提高无电子阻挡层的AlGaN深紫外金宝搏188软件怎么用
二极管的性能

桑習恩; 王芳; 刘俊杰; 刘玉怀

doi:10.37188/CO.EN-2025-0033

通过使用无掺杂的Al_0.8Ga_0.2N条状薄层结构提高无电子阻挡层的AlGaN深紫外金宝搏188软件怎么用二极管的性能

桑習恩^1,,
王芳^{1, 2, 3, 4, ,},
刘俊杰⁵,
刘玉怀^{1, 2, 3, 4, ,}

1.
郑州大学电气与信息工程学院电子材料与系统国际联合研究中心河南省电子材料与系统国际联合实验室, 河南郑州 450001
2.
教育部集成电路设计与应用国际合作联合实验室, 河南郑州 450001
3.
郑州大学智能传感研究院郑州大学产业技术研究院有限公司, 河南郑州 450001
4.
郑州唯独电子科技有限公司, 河南郑州 450001
5.
北方民族大学电气与信息工程学院, 宁夏银川 750001

详细信息

中图分类号: O472
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出版历程
- 收稿日期: 2025-06-16
- 修回日期: 2026-07-08
- 网络出版日期: 2025-09-20

Enhancing the performance of AlGaN deep-ultraviolet laser diodes without an electron blocking layer by using a thin undoped Al_0.8Ga_0.2N strip layer structure

doi: 10.37188/CO.EN-2025-0033

SANG Xi-en^1
,,
WANG Fang^{1, 2, 3, 4
, ,},
LIU Jun-jie⁵,
LIU Yu-huai^{1, 2, 3, 4
, ,}

1.
International Joint-Laboratory of Electronic Materials and Systems of Henan Province, International Joint Research of Electronic Materials and Systems, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou 450001, China
2.
International Joint Laboratory for Integrated Circuits Design and Application, Ministry of Education, Zhengzhou 450001, China
3.
Research Institute of Industrial Technology Co., Ltd., Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou 450001, China
4.
Zhengzhou Way Do Electronics Co. Ltd., Zhengzhou 450001, China
5.
School of Electrical and Information Engineering, North Minzu University, Yinchuan750001, China

Funds: Supported by National Natural Science Foundation of China (No. 62174148); National Key Research and Development Program (No. 2022YFE0112000); Key Program for International Joint Research of Henan Province (No. 231111520300)

More Information

Author Bio:
SANG Xi-en (1999—), male, Zhumadian, Henan Province, Ph.D. enrolled in Zhengzhou University University for Ph.D. in 2024, mainly engaged in the research of nitride semiconductor devices and materials. E-mail: zzuxien@163.com

WANG Fang (1972—), female, born in Zhoukou, Henan Province, Ph.D., associate professor. She received her Ph.D. degree from Mie University, Japan in 2008. Currently, her research interests focus on III-nitride semiconductor-based deep-ultraviolet (DUV) LEDs, laser diodes (LDs), and wireless communication systems. E-mail: iefwang@zzu.edu.cn

LIU Yu-huai (1969—), male, born in Huainan, Anhui Province, Ph.D., professor. He received his Ph.D. degree from Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences in 1999. Currently, his research focuses on nitride semiconductor-based deep-ultraviolet (DUV) LEDs, laser diodes (LDs), and optoelectronic chip integration. E-mail: ieyhliu@zzu.edu.cn

Corresponding author: iefwang@zzu.edu.cn; ieyhliu@zzu.edu.cn

摘要

摘要:
基于AlGaN的深紫外金宝搏188软件怎么用二极管因电子泄漏和空穴注入效率低下而面临性能挑战，且传统电子阻挡层的极化效应会加剧这些问题。为克服这些限制，本文提出了一种无电子阻挡层的深紫外金宝搏188软件怎么用二极管设计方案，在最后一个量子阱之后引入了一层1 nm厚的未掺杂Al_0.8Ga_0.2N薄条状层。通过PICS3D仿真，本文评估了其光学和电学特性。结果表明，有效电子势垒高度显著增加（从158.2 meV增至420.7 meV），而空穴势垒高度则从149.2 meV降至62.8 meV，这增强了空穴注入并减少了电子泄漏。优化后的结构（LD3）输出功率提升了14%，斜率效率提高至1.85 W/A，而且降低了阈值电流。该设计还减弱了量子局域斯塔克效应，并形成了双空穴积累区，从而提高了复合效率。本文的研究成果为适用于高功率应用的高性能、无EBL深紫外金宝搏188软件怎么用器提供了一种极具前景的解决方案。
- AlGaN /
- 深紫外金宝搏188软件怎么用器 /
- 未掺杂条状薄层 /
- 无电子阻挡层
Abstract:
AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) face performance challenges due to electron leakage and poor hole injection which is often worsened by polarization effects from conventional electron blocking layers (EBLs). To overcome these limitations, we propose an EBL-free DUV LD design incorporating a 1-nm undoped Al_0.8Ga_0.2N thin strip layer after the last quantum barrier. Using PICS3D simulations, we evaluate the optical and electrical characteristics. Results show a significant increase in effective electron barrier height (from 158.2 meV to 420.7 meV) and a reduction in hole barrier height (from 149.2 meV to 62.8 meV), which enhance hole injection and reduce electron leakage. The optimized structure (LD3) achieves a 14% increase in output power, improved slope efficiency (1.85 W/A), and lower threshold current. This design also reduces the quantum confined Stark effect and forms dual hole accumulation regions, improving recombination efficiency.
- AlGaN /
- deep ultraviolet laser diodes /
- undoped thin strip structure /
- without an electron blocking layers

HTML全文

Figure 1. (a) Schematics of the DUV-LD structure, and (b) LD1, LD2, and LD3 structure diagram

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Figure 2. Energy band diagram and quasi-fermi level of (a) LD1, (b) LD2, and (c) LD3

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Figure 3. (a) Electron leakage in the p-type region of three structures, and (b) hole concentration of the three structures

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Figure 4. (a) P-I curve of three structures, and (b) I-V curve of three structures

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Figure 5. (a) The electron concentration in the MQWs, (b) the hole concentration in the MQWs, (c) stimulated recombination rate in MQWs, and (d) numerically calculated near-field optical model profile for LD1, LD2, and LD3

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Figure 6. (a) Electron current density of three structures, and (b) hole current density of three structures

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Figure 7. (a) LD2 output power varying with different Al components, (b) LD2 recombination rates varying with different Al components in MQWs, (c) output power varying with different thickness of Al_0.8Ga_0.2N strip of LD2, and (d) recombination rates varying with different thickness of Al_0.8Ga_0.2N strip of LD2 in MQWs

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Figure 8. (a) LD3 output power varying with different Al components, (b) LD3 recombination rates varying with different Al components in MQWs, (c) output power varying with different thickness of Al_0.8Ga_0.2N strip of LD3, and (d) recombination rates varying with different thickness of Al_0.8Ga_0.2N strip of LD3 in MQWs

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Figure 9. Electric field distribution varying with (a) different A components and (b) different thicknes of LD3

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map

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